According to news from Fast Technology on April 9, Xiaomi released “Xiaomi SU7 answers netizens’ questions (episode 12)” this evening.
A few days ago, Zhiji Automobile mistakenly referred to Xiaomi SU7’s front and rear double silicon carbide motor as the front and rear IGBT+ SiC motor at the Zhiji L6 press conference, causing heated discussion among netizens.
Here, Xiaomi Automobile also explained to netizens what is the meaning of the whole system-wide SiC silicon carbide high voltage platform and what are its advantages? According to Xiaomi Automobile, IGBT/SiC refers to the power module in the electric drive controller, which is a switching device composed of one or more sets of power chips in parallel.
There are IGBT type chips based on Si and MOSFET type chips based on SiC (yes, IGBT is semiconductor type and SiC refers to chip material).
The power module is responsible for converting DC to AC when the motor is driven and AC to DC when energy recovery, so its efficiency is very important for electric vehicles.
Compared with Si IGBT, SiC MOSFET has lower switching loss and higher efficiency.
Because of the high difficulty of manufacturing process, long production cycle, low yield and good product rate of SiC, the price of SiC is 2 to 5 times higher than that of Si.
The full range of SiC silicon carbide high voltage platform means that the millet SU7 high and low configuration not only uses the SiC silicon carbide power module on the drive motor.
The car charger (OBC) and the air conditioning compressor of the thermal management system, two key components that require high energy efficiency, also contain silicon carbide materials in order to achieve better energy efficiency performance.
Global silicon carbide is one of the technical means for Xiaomi SU7 to achieve extreme low energy consumption.
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