Due to potential applications in artificial intelligence driving technologies such as 3D Face Recognition, augmented/virtual reality, robots and autonomous vehicles, the market has seen a surge in demand for high-pixel count, low-cost focal plane arrays in near-infrared (NIR) and short-wavelength infrared (SWIR) spectra.
Traditional short-wave infrared photodiodes rely on crystal germanium (Ge) or indium gallium arsenide (InGaAs), but they have limitations such as high dark current and complex manufacturing processes.
The emergence of organic semiconductors provides a promising alternative with the potential to be easier to manufacture and tunable optical properties.
, According to foreign media reports, researchers at South China University of Technology have created an infrared photodetector based on organic semiconductors that is expected to change imaging technology.
Relevant research was published in the journal “Chinese Journal of Polymer Scienc” and showed that these organic photodiodes can operate in a wide range of wavelengths from near ultraviolet to short wavelength infrared, and their performance is superior to traditional inorganic detectors.
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