On September 11, Infineon Technologies announced that it had successfully developed the world’s first 300-millimeter-power gallium nitride (GaN) wafer technology.
Infineon is the first company in the world to master this breakthrough technology in an existing scalable mass production environment.
This breakthrough will help significantly boost the GaN-based power semiconductor market.
Compared to 200 mm wafers, chip production on 300 mm wafers is more technologically advanced and more efficient because the larger wafer diameter can accommodate 2.
3 times the number of chips.
, Photo source: Infineon, return to the home page of First Electric Network>,.
Link to this article: https://evcnd.com/infineon-is-the-first-to-launch-the-worlds-first-300-mm-power-gallium-nitride-technology/
