On October 14, BASF developed a polyphthalamide (PPA) for the next generation of power electronics products-Ultramid®Advanced N3U41G6, which is particularly suitable for manufacturing IGBT (Insulated Gate Bipolar Transistor) semiconductor casings.
It can meet the growing demand for high-performance and reliable electronic components in fields such as electric vehicles, high-speed trains, intelligent manufacturing and renewable energy power generation.
Power electronics technology company Semikron Danfoss currently uses BASF PPA as a housing material for its Semitrans 10 IGBT, which can be installed in inverters in photovoltaic and wind energy systems.
Ultramid®Advanced N-grade materials have excellent chemical resistance and size stability that enhance the robustness, long-term performance and reliability of these IGBTs to meet the growing market demand for energy conservation, higher power density and higher efficiency.
IGBTs can effectively switch and control circuits in power electronic products.
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