Semiconductor manufacturer Nexperia recently announced plans to invest US$200 million (approximately 184 million euros) in the development of next-generation wide-gap semiconductor products (WBG), such as silicon carbide (SiC) and gallium nitride (GaN), and establish production infrastructure at the Hamburg factory.
At the same time, the wafer factory’s silicon (Si) diode and transistor production capacity will increase.
, Photo source: Anshi Semiconductor.
It is reported that in order to meet the growing long-term demand for high-efficiency power semiconductors, Anshi Semiconductor will start developing and producing SiC, GaN and Si technologies in Germany from June 2024.
Among them, the first high-voltage D-Mode GaN transistor and SiC diode production line will be put into use in June 2024.
The next milestone will be the establishment of 200 mm SiC MOSFET and low-voltage GaN HEMT production lines.
These production lines will be completed at the Hamburg factory within the next two years.
At the same time, the investment will also help further automate the existing infrastructure of the Hamburg plant and expand silicon production capacity by gradually shifting to 200 mm wafers.
, Axis Semiconductor pointed out that this move fully demonstrates its strong support for key technologies in the fields of electrification and digitalization.
“SiC and GaN semiconductors enable high-power applications such as data centers to operate with excellent efficiency, and are also renewable energy applications and electric vehicles.
The core component of the vehicle.
These wide bandgap technologies have huge potential and are increasingly important for achieving decarbonization goals.
“, It is worth noting that this investment is another important milestone in the century-old history of Anshi Semiconductor’s Lockstedt plant in Hamburg.
It is reported that since the establishment of Valvo Radioröhrenfabrik in 1924, the factory has continued to develop and now supports approximately one-quarter of the world’s small-signal diode and transistor needs.
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